5.5 kV Bipolar Diodes From High Quality CVD 411-SiC
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 2 references indexed in Scilit:
- Growth of SiC by ?Hot-Wall? CVD and HTCVDPhysica Status Solidi (b), 1997
- Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiCJournal of Applied Physics, 1996