InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics
- 1 May 2000
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 7 (3-4) , 489-493
- https://doi.org/10.1016/s1386-9477(99)00371-9
Abstract
No abstract availableKeywords
Funding Information
- Engineering and Physical Sciences Research Council (GR/L28821, GR/L95489)
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