Core level photoemission study of the interaction of plasmas with real GaAs(100) surfaces
- 1 April 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 152-153, 1147-1152
- https://doi.org/10.1016/0039-6028(85)90533-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Chemical depth profiles of the GaAs/native oxide interfaceJournal of Vacuum Science and Technology, 1980
- Effects of Water Vapor and Oxygen Excitation on Oxidation of GaAs, GaP and InSb Surfaces Studied by X-Ray Photoemission SpectroscopyJapanese Journal of Applied Physics, 1979
- Relaxation during photoemission and LMM Auger decay in arsenic and some of its compoundsThe Journal of Chemical Physics, 1976