Generation of transient response of nonlinear bipolar transistor circuits from device fabrication data
- 1 February 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 12 (1) , 29-38
- https://doi.org/10.1109/jssc.1977.1050837
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A study of the effect of peripheral injection in bipolar transistors using simplified computer analysisIEEE Transactions on Electron Devices, 1977
- A three-terminal piecewise-linear modelling approach to dc analysis of transistor circuitsInternational Journal of Circuit Theory and Applications, 1974
- Efficient transient analysis of transistor circuits from device fabrication dataProceedings of the IEEE, 1974
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Characterization of bipolar devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effectsIEEE Transactions on Electron Devices, 1972
- Nonlinear circuit theory: Resistive networksProceedings of the IEEE, 1971
- DC Analysis of Nonlinear Networks Based on Generalized Piecewise-Linear CharacterizationIEEE Transactions on Circuit Theory, 1971
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- Current gain and cutoff frequency falloff at high currentsIEEE Transactions on Electron Devices, 1969