Analysis of Si-K edge EXAFS in the low k domain

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Abstract
Studies of the silicon absorption spectrum above the K-edge in crystalline silicon carbide SiC and in pure crystalline silicon are reported. We show that for these systems, no high order scattering is needed to interpret the experimental results down to few eV above the edge. This behaviour can be explained assuming, below typically 4Å-1, a flattening of the phase factors versus k : all the data are understood in terms of single backscattering of the photoelectron by the neighbours and then can be analysed with a simple Fourier transform