Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method
- 1 December 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 120 (1-4) , 293-297
- https://doi.org/10.1016/s0168-583x(96)00530-7
Abstract
No abstract availableKeywords
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