A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

This publication has 38 references indexed in Scilit:

• Individual interface states and their implications for low-frequency noise in MOSFETs
  Applied Surface Science, 1987
• 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
  Applied Physics Letters, 1985
• Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
  IEEE Transactions on Electron Devices, 1984
• Temperature dependence of scattering in the inversion layer
  Surface Science, 1980
• Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
  IEEE Transactions on Electron Devices, 1980
• Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures
  Physical Review B, 1979
• Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields
  Journal of the Physics Society Japan, 1977
• Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges
  Physical Review B, 1972
• The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interface
  Surface Science, 1972
• Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
  Physical Review B, 1967