Pre-amorphization damage in Si(100) implanted with high mass MeV ions
- 1 January 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 62 (3) , 372-376
- https://doi.org/10.1016/0168-583x(92)95259-t
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Pre-amorphization damage in ion-implanted siliconMaterials Science Reports, 1991
- Structural relaxation and defect annihilation in pure amorphous siliconPhysical Review B, 1991
- Avoiding preamorphization damage in MeV heavy ion-implanted siliconApplied Physics Letters, 1991
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Silicon amorphization during ion implantation as a thermal phenomenonPhysical Review B, 1987
- MeV-energy B+, P+ and As+ ion implantation into SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Transmission electron microscopy study of ion implantation induced Si amorphizationNuclear Instruments and Methods in Physics Research, 1983
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980