Avoiding preamorphization damage in MeV heavy ion-implanted silicon
- 17 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (24) , 2827-2829
- https://doi.org/10.1063/1.105228
Abstract
Implantation of 1.0 MeV 115In in Si results in secondary-defect formation during subsequent 900 °C annealing if the total number of displaced Si atoms is greater than 1.6×1017/cm2, achieved with a dose near 1.5×1013/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to remove the implant damage. While a single 6×1013 In/cm2 implant results in a high density of dislocation loops after annealing, instead using four separate 1.5×1013 In/cm2 implants each followed by an anneal leads to the formation of only a few partial dislocations.Keywords
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