Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique
- 1 January 1991
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (2) , 224-231
- https://doi.org/10.1109/3.78223
Abstract
Modulation-doped and intrinsic multiple-quantum-well (MQW) structures under applied electric fields are investigated using the transfer-matrix technique (TMT). A new method for locating quasi-eigenvalue energies is introduced and compared to traditional techniques based on the occupation probability and transmission coefficient. Electron and heavy-hole energy quasi-eigenvalues and wave functions are calculated for modulation-doped and intrinsic quantum wells. The upper subbands of the two cases are found to vary significantly from one another in the presence of applied electric fields. The TMT is demonstrated to be a versatile method for modeling MQW structures under linear and nonlinear electric fields.This publication has 19 references indexed in Scilit:
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