Effect of hydrogen loading on temperature/electric-fieldpoling of SiO 2 -based thin filmson Si
- 31 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (18) , 1604-1606
- https://doi.org/10.1049/el:19951091
Abstract
Waveguide stacks of Ge:SiO2-based glass deposited on Si exhibit a permanent second-order nonlinearity following temperature/electric-field poling. High temperature hydrogen loading increases the second harmonic signal under certain conditions.Keywords
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