High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins

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  • 20 November 2003
Abstract
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined by only a product of the spin polarizations of FM-S junctions.

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