High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of the injected spins

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  • 19 September 2003
Abstract
We describe a new mechanism of magnetoresistance based on a tunneling-emission of spin polarized electrons from ferromagnets into semiconductors and precession of electron spin in the semiconductor layer under external magnetic field. A ferromagnet-semiconductor-ferromagnet structure is considered, which includes very thin heavily doped interfacial layers ($\delta$-doped layers). We show that at certain parameters the system is highly sensitive at room-temperature to the magnetic field variations with frequencies up to 100 GHz.

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