Hot-wall epitaxy system for the growth of multilayer IV-VI compound heterostructures
- 1 June 1983
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 54 (6) , 685-689
- https://doi.org/10.1063/1.1137454
Abstract
A modified hot-wall epitaxy (HWE) system for the growth of multiple heterolayers is described which consists of two identical HWE furnaces. The substrate furnaces are mounted on a rotatable plate which allows the growth of heterolayers under nearly identical conditions for each individual layer. Single layers and multilayer heterostructures of the PbTe/Pb1−xSnxTe system were grown with this apparatus and typical results are presented.Keywords
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