Structure and transport properties of amorphous Ge1−xCx:H thin films obtained by activated reactive evaporation
- 1 May 1988
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 101 (2-3) , 287-290
- https://doi.org/10.1016/0022-3093(88)90165-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Optical and electronic properties of reactively sputtered amorphous GeNx:HApplied Physics Letters, 1987
- Optical properties of non-stoichiometric germanium nitride compounds (a-GeNx)Journal of Non-Crystalline Solids, 1985
- Band-gap tailoring in amorphous germanium-nitrogen compoundsApplied Physics Letters, 1985
- Annealing and crystallization processes in tetrahedrally bonded binary amorphous semiconductorsPhilosophical Magazine Part B, 1984
- The effect of nitrogen doping on amorphous germaniumJournal of Non-Crystalline Solids, 1983
- Infrared absorption of hydrogenated amorphous SiC and GeC filmsThin Solid Films, 1980
- Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation techniqueThin Solid Films, 1980
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Infrared absorption in hydrogenated amorphous and crystallized germaniumJournal of Non-Crystalline Solids, 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977