Annealing and crystallization processes in tetrahedrally bonded binary amorphous semiconductors

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Abstract
Results of Raman scattering, infrared absorption, X-ray diffraction and electron spin resonance measurements as a function of annealing temperature are reported for Si-C, S-N, Si-Ge and Ge-C alloy films prepared by r.f. sputtering. Amorphous Si-C and Si-N Films tend to segregate into stoichiometric clusters (SiC and Si3N4) and excess element clusters with annealing, and the crystallization temperature for these films increases with increasing C or N content. Amorphous Si-Ge films are crystallized by annealing without segregation, and the crystallization temperature for these films decreases monotonically with increasing Ge content. Amorphous Ge-C films are crystallized by annealing with segregation into Ge- and C-like clusters, and the crystallization temperature has a maximum value around Ge0·42C0·58.