Importance of the emitter in thin back-surface field solar cells
- 31 May 1983
- journal article
- Published by Elsevier in Solar Cells
- Vol. 8 (4) , 337-353
- https://doi.org/10.1016/0379-6787(83)90096-0
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Effect of the back-surface field on the open-circuit voltages of p+-n-n+ and n+-p-p+ silicon solar cellsSolar Cells, 1982
- Heavy-doping effects in silicon: The role of Auger processesSolar Cells, 1981
- The physics of heavily doped n+-p junction solar cellsSolar Cells, 1981
- The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlightSolid-State Electronics, 1980
- The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cellsIEEE Transactions on Electron Devices, 1979
- Application of the superposition principle to solar-cell analysisIEEE Transactions on Electron Devices, 1979
- Effect of back surface field on photocurrent in a semiconductor junctionSolid-State Electronics, 1978
- Junction potentials of strongly illuminated n+ - p - p+ solar cellsSolid-State Electronics, 1978
- Saturation of photovoltage and photocurrent in p-n junction solar cellsIEEE Transactions on Electron Devices, 1976
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958