Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films
- 1 August 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (8A) , L1078
- https://doi.org/10.1143/jjap.32.l1078
Abstract
Al-(0.7-1.4 wt%) Cu alloy films for LSI interconnects were formed, for the first time, by a metalorganic chemical vapor deposition method, using dimethylaluminumhydride ((CH3)2AlH) and cyclopentadienylcoppertriethylphosphine ((C5H5)CuP(C2H5)3) as precursors. The depth profile of Auger electron spectroscopy showed that the deposited films had a uniform Cu distribution. The transmission electron microscopy (TEM) and electron diffraction analyses confirmed the presence of CuAl2 precipitates in the films.Keywords
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