Photoexcitation of electron-hole pairs during SIMS
- 1 September 1989
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 49 (3) , 279-283
- https://doi.org/10.1007/bf00616855
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Electrical activation of low-fluence boron implantation in silicon studied by PCV in combination with SIMSApplied Physics A, 1988
- Surface sputtering rate reduction and its effect on SIMS depth profiling in cesium-ion-bombarded GaAsJournal of Vacuum Science & Technology A, 1985
- 3 to 15 keV Ar+ induced Auger electron emission from Si and ArApplied Physics A, 1977