A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structures
- 30 June 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (6) , 1113-1118
- https://doi.org/10.1016/0038-1101(88)90414-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunnelingIEEE Electron Device Letters, 1983
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982
- Effect of substrate generation current on oxide I-V measurement on p-type MOS structuresSolid-State Electronics, 1979
- On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fieldsApplied Physics Letters, 1977
- Tunneling of electrons from Si into thermally grown SiO2Solid-State Electronics, 1977
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969