Silicon hetero-interface photodetector
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 29-30 vol.1
- https://doi.org/10.1109/leos.1995.484492
Abstract
We propose and demonstrate a novel avalanche photodetector that uses separate InGaAs absorption and Si multiplication regions fabricated by wafer fusion. Directly integrating InGaAs and silicon layers in an avalanche photodetector combines the high long-wavelength absorption capabilities of InGaAs and the avalanche multiplication properties of Si. The large ratio of electron and hole ionization coefficients of silicon results in lower noise and a higher gain bandwidth product than achievable using III-V semiconductors in avalanche regions.Keywords
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