Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering
- 1 July 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (7) , 712-714
- https://doi.org/10.1109/68.393182
Abstract
Significant reduction of threshold currents in InGaAs-GaAs quantum-well ridge-waveguide lasers has been achieved by using silicon-induced disordering to provide lateral confinement. Room-temperature threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device. In addition, the effects of high-temperature annealing on the various device characteristics, such as the gain curve, internal loss, and quantum efficiency, have been investigated.Keywords
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