1.0-mA-threshold uncoated lasers by impurity-induced disordering
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (6) , 591-594
- https://doi.org/10.1109/68.219678
Abstract
Low-threshold lasers fabricated by impurity-induced disordering using InGaAs/GaAs/AlGaAs double-quantum-well material are discussed. Threshold current as low as 1.0 mA under room-temperature continuous-wave operation was obtained for uncoated lasers. Experimental data show that this low threshold is mainly due to the optimizations for both the quantum well (QW) design and the device structures.Keywords
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