Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field
- 31 December 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (12) , 1863-1869
- https://doi.org/10.1016/s0038-1101(97)00152-4
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High speed p-type SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1996
- Electron transport properties of Si/SiGe heterostructures: Measurements and device implicationsApplied Physics Letters, 1993
- Electron transport in strained Si layers on Si1−xGex substratesApplied Physics Letters, 1993
- Fabrication of high mobility two-dimensional electron and hole gases in GeSi/SiJournal of Applied Physics, 1993
- High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained SiApplied Physics Letters, 1993
- Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulationApplied Physics Letters, 1993
- Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1−xGexApplied Physics Letters, 1992
- Reduced intervalley scattering rates in strained Si/SixGe1−x quantum wells and enhancement of electron mobility: A model calculationJournal of Applied Physics, 1992
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substratesApplied Physics Letters, 1991
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991