High speed p-type SiGe modulation-doped field-effect transistors

This publication has 15 references indexed in Scilit:

• SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
  IEEE Electron Device Letters, 1994
• High hole mobility in SiGe alloys for device applications
  Applied Physics Letters, 1994
• Fabrication of strain-controlled SiGe/Ge MODFET with ultrahigh hole mobility
  IEEE Transactions on Electron Devices, 1994
• Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
  IEEE Electron Device Letters, 1994
• Electronic-band parameters in strained ${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ alloys on ${\mathrm{Si}}_{1\mathrm{-}\mathit{y}}$${\mathrm{Ge}}_{\mathit{y}}$ substrates
  Physical Review B, 1993
• Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
  Applied Physics Letters, 1993
• p-type Ge-channel MODFETs with high transconductance grown on Si substrates
  IEEE Electron Device Letters, 1993
• A high-performance 0.25- mu m CMOS technology. I. Design and characterization
  IEEE Transactions on Electron Devices, 1992
• Single and dual p-doped channel In/sub 0.52/Al/sub 0.48/ As/In/sub x/Ga/sub 1-x/As (x=0.53, 0.65) FET's and the role of doping
  IEEE Transactions on Electron Devices, 1992
• Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
  IEEE Electron Device Letters, 1991