SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (10) , 402-405
- https://doi.org/10.1109/55.320982
Abstract
A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One /spl mu/m Al gate Si/sub 0.86/Ge/sub 0.15/ p-metal-oxide-semiconductor field-effect-transistors (pMOSFET's) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm/sup 2//V-s at 300 K and 530 cm/sup 2//V-s at 77 K have been obtained.Keywords
This publication has 10 references indexed in Scilit:
- On the universality of inversion-layer mobility in n- and p-channel MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe-channel heterojunction p-MOSFET'sIEEE Transactions on Electron Devices, 1994
- SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasmaApplied Physics Letters, 1993
- High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained SiApplied Physics Letters, 1993
- Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasmaApplied Physics Letters, 1992
- Effects of Ge concentration on SiGe oxidation behaviorApplied Physics Letters, 1991
- Wet oxidation of GeSi strained layers by rapid thermal processingApplied Physics Letters, 1990
- Oxidation studies of SiGeJournal of Applied Physics, 1989
- Subthreshold drain leakage currents in MOS field-effect transistorsIEEE Transactions on Electron Devices, 1972