Effects of Ge concentration on SiGe oxidation behavior
- 2 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (10) , 1200-1202
- https://doi.org/10.1063/1.105502
Abstract
The oxidation of SiGe layers grown by molecular beam epitaxy was studied. Auger depth profile showed that after oxidation, Ge was completely rejected from the oxide and Ge-rich layers were formed. However, the Ge concentration in the SiGe layer was found to play an important role in the formation of these Ge-Rich layers. For SiGe with Ge concentration below 50%, Si was preferentially oxidized and only one Ge-rich layer was formed at the oxide/substrate interface. On the other hand, for SiGe with Ge concentration above 50%, two Ge-rich layers were formed after oxidation with one at the oxide/substrate interface and the other at the oxide surface. X-ray photoelectron spectroscopy studies showed that Ge at the oxide/substrate interface is in elemental form, while Ge at the oxide surface is in an intermediate oxidized state. A classical binary alloy oxidation theory is employed to explain the overall oxidation behavior qualitatively.Keywords
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