Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer
- 18 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3) , 204-206
- https://doi.org/10.1063/1.100148
Abstract
Resonant tunneling of holes through an unstrained GeSi well between two strained Si barriers on a relaxed GeSi buffer layer has been observed for the first time. The peak-to-valley ratios of 2.1/1 at 4.2 K and 1.6/1 at 77 K in current-voltage characteristics were attained for light holes. Resonant tunneling from heavy-hole states was also observed at room temperature, as well as 77 and 4.2 K by conductance measurement. The positions of the resonance peaks are in good agreement with the light- and heavy-hole bound states in the quantum well.Keywords
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