Oxidation of Strained Si-Ge Layers Grown by MBE
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.Keywords
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