The adsorption behaviour of O2 on the clean Si(110) surface in the early stage
- 1 August 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 186 (3) , L557-L560
- https://doi.org/10.1016/s0039-6028(87)80376-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2Surface Science, 1987
- Orientation dependent adsorption on a cylindrical silicon crystal: II. OxygenSurface Science, 1985
- Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopySurface Science, 1981
- Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfacesSurface Science, 1980
- Phase transitions on clean Si(110) surfacesSurface Science, 1977
- LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surfaceSurface Science, 1977
- Hydrogen chemisorption on the silicon (110) 5×1 surfaceJournal of Vacuum Science and Technology, 1976
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965