Ion-implantation-induced lattice defects in PbTe

1 June 1977

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 30 (11) , 557-559
https://doi.org/10.1063/1.89258

Abstract

Hall-effect and conductivity measurements as well as channeling-effect measurements were used to study the lattice defects induced by ion implantation in thin films of PbTe. The implantation was performed with 300-keV Pb, Te, and Xe ions at room temperature. For the as-implanted samples the Hall-effect measurements gave a constant value for the carrier concentration, independent of the implantation dose. The backscattering measurements showed a continuous increase in the lattice disorder with increasing dose. A model, based on the assumption of an acceptor level above the conduction-band minimum, is proposed to explain this behavior.

Keywords

This publication has 4 references indexed in Scilit:

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