Electron emission properties of crystalline diamond and III-nitride surfaces
- 1 June 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 130-132, 694-703
- https://doi.org/10.1016/s0169-4332(98)00140-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiCApplied Surface Science, 1996
- Negative electron affinity surfaces of aluminum nitride and diamondDiamond and Related Materials, 1996
- Electron field emission from a cesiated NEA diamond (100) surface: an activation conceptDiamond and Related Materials, 1996
- Comparison of electric field emission from nitrogen-doped, type Ib diamond, and boron-doped diamondApplied Physics Letters, 1996
- Observation of a negative electron affinity for boron nitrideApplied Physics Letters, 1995
- Electron Emission Due to Exciton Breakup from Negative Electron Affinity DiamondPhysical Review Letters, 1995
- Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)Applied Physics Letters, 1994
- Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfacesPhysical Review B, 1994
- The diamond surface: atomic and electronic structureSurface Science, 1986
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979