High Resistivity N-Type Silicon Detectors Produced by Neutron Transmutation Doping
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (1) , 292-296
- https://doi.org/10.1109/tns.1979.4329647
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Rapid Determination of the Distribution of 31P in Neutron‐Irradiated SiliconJournal of the Electrochemical Society, 1977
- Application of thermal neutron irradiation for large scale production of homogeneous phosphorus doping of floatzone siliconIEEE Transactions on Electron Devices, 1976
- Ultrahigh Purification of Silane for Semiconductor SiliconJournal of the Electrochemical Society, 1975
- Thick Junctions Made with Nuclear Compensated SiliconIEEE Transactions on Nuclear Science, 1964
- Preparation of Uniform Resistivity n-Type Silicon by Nuclear TransmutationJournal of the Electrochemical Society, 1961