III−V Nitride Epilayers for Photoelectrochemical Water Splitting: GaPN and GaAsPN
- 1 December 2006
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 110 (50) , 25297-25307
- https://doi.org/10.1021/jp0652805
Abstract
Epilayers of single-crystal GaAsPN and GaPN semiconductor samples with varying nitrogen compositions were photoelectrochemically characterized to determine their potential to serve as water splitting photoelectrodes. The band gap and flatband potentials were determined and used to calculate the valence and conduction band edge energies. The band edges for all compositions appear to be too negative by more than 500 mV for any of the materials to effect light-driven water splitting without an external bias. Corrosion analysis was used to establish material stability under operating conditions. GaPN was found to show good stability toward photocorrosion; on the other hand, GaAsPN showed enhanced photocorrosion as compared to GaP.Keywords
This publication has 20 references indexed in Scilit:
- Persistent photocurrent spectroscopy of GaN metal–semiconductor–metal photodetectors on long time scaleApplied Physics Letters, 2004
- Recombination processes in N-containing III–V ternary alloysSolid-State Electronics, 2002
- Photoelectrochemical characterisation of indium nitride and tin nitride in aqueous solutionSolar Energy Materials and Solar Cells, 2002
- III N V semiconductors for solar photovoltaic applicationsSemiconductor Science and Technology, 2002
- A Photoelectrochemical Study of In[sub x]Ga[sub 1−x]N FilmsJournal of the Electrochemical Society, 2002
- Suppression of Band Edge Migration at the p-GaInP2/H2O Interface under Illumination via CatalysisThe Journal of Physical Chemistry B, 2000
- Electrochemical Stability of p ‐ GaInP2 in Aqueous Electrolytes Toward Photoelectrochemical Water SplittingJournal of the Electrochemical Society, 1998
- Atomic Structure of Si Surfaces Etched in Triton/NaOH SolutionsThe Journal of Physical Chemistry, 1995
- Decay kinetics of persistent photoconductivity in semiconductorsPhysical Review B, 1986
- Energetics of the semiconductor-electrolyte interfaceJournal of Chemical Education, 1983