Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
- 2 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (9) , 1066-1068
- https://doi.org/10.1063/1.120966
Abstract
Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime (0.06 ns) for a single quantum well structure, while an increasingly long decay lifetime is measured for multiquantum wells as more quantum wells are incorporated into the structure. Temperature-dependent lifetime measurements show that a nonradiative recombination mechanism activates above 45 K in the single quantum well but is less important in the multiquantum wells.Keywords
This publication has 9 references indexed in Scilit:
- Spatially resolved cathodoluminescence spectra of InGaN quantum wellsApplied Physics Letters, 1997
- Average inversion level, modeling, and physics of erbium-doped fiber amplifiersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniquesIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Recombination dynamics in InGaN quantum wellsApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- InGaN/AlGaN blue-light-emitting diodesJournal of Vacuum Science & Technology A, 1995
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975