Excess base noise in the bipolar junction transistor
- 30 September 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (9) , 875-876
- https://doi.org/10.1016/0038-1101(85)90078-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An accurate analysis of noise in rectangular bipolar transistors including current crowdingSolid-State Electronics, 1980
- Analyse des effets de la défocalisation du courant émetteur sur les mécanismes de conduction et de bruit de fond des transistors à jonctionsPhysica Status Solidi (a), 1975
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964