A study of efficiency in low resistivity silicon solar cells
- 29 February 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (2) , 95-102
- https://doi.org/10.1016/0038-1101(76)90084-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Influence of Oxide Layers on the Determination of the Optical Properties of SiliconJournal of Applied Physics, 1972
- Effects of base doping and width on the JV characteristics of the n+−n−p+ structureSolid-State Electronics, 1972
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- Photon spectrum outside the earth's atmosphereSolar Energy, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Infrared Absorption in-Type SiliconPhysical Review B, 1957
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Optical Properties of Silicon Monoxide in the Wavelength Region from 024 to 140 Microns*Journal of the Optical Society of America, 1954
- Proposed standard solar-radiation curves for engineering useJournal of the Franklin Institute, 1940