Critical-Voltage Effects in Electron-Channeling Patterns
- 16 June 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (24) , 1590-1593
- https://doi.org/10.1103/physrevlett.44.1590
Abstract
A linewidth minimum in the (220) electron-channeling-pattern (ECP) reflection in tungsten has been measured at 10.50±0.05 keV incident beam energy. This is interpreted as a second-order critical-voltage effect and is the first reported observation of such an effect in ECP's. The experimental critical voltage has been used to refine the tungsten (110) Fourier lattice-potential coefficient. The shape of the line-narrowing curve is used to estimate the depth of ECP information.Keywords
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