Measurements of electron channeling pattern linewidths in silicon
- 1 January 1979
- Vol. 2 (4) , 249-254
- https://doi.org/10.1002/sca.4950020407
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Zur Bestimmung der Orientierung kubischer Kristalle bezüglich beliebiger Raumrichtungen mit Hilfe der Selected Area Diffraction (SAD)-Methode im Rasterelektronenmikroskop / The Determination of the Orientation of Cubic Crystals Relative to any Desired Direction Using Electron Channelling Patterns in the Scanning Electron MicroscopePractical Metallography, 1973
- Interpretation of the Widths of SEM Electron Channelling LinesPhysica Status Solidi (b), 1971
- MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPEApplied Physics Letters, 1970