Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1307-1315
- https://doi.org/10.1109/23.273537
Abstract
An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced oxide-trapped charge and interface-trapped charge; Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated add quantified.This publication has 13 references indexed in Scilit:
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