Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K

15 March 1993

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 73 (6) , 2910-2915
https://doi.org/10.1063/1.353021

Abstract

The effects of radiation‐induced interface‐trapped charge and oxide‐trapped charge on the inversion‐layer hole mobility in p‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K are investigated. The mobility degradation is more pronounced at 77 K than at 300 K, due to increased importance of Coulomb scattering from trapped charge when phonon scattering is significantly reduced. The mobility degradation is primarily due to interface‐trapped charge, but the effects of oxide‐trapped charge must be taken into account in order to properly describe the mobility behavior, particularly at cryogenic temperatures.

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