Feasibility of infrared imaging arrays using high-T c superconducting bolometers

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Abstract
The design of high‐Tc superconducting bolometers for applications such as infrared imaging arrays is discussed. The dependence of bolometer sensitivity on excess voltage noise in the thermometer is a function of the detector area and thus of the wavelength to be detected. Measurements of the voltage noise in thin films of YBa2Cu3O7−δ on Si, Si3N4, and sapphire substrates are used to predict the performance of different bolometer architectures. Useful opportunities exist for bolometers made on both Si and Si3N4 membranes. A readout scheme for two‐dimensional arrays of bolometers is also described in which real‐time signal integration is performed on the chip.