Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs
- 15 July 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (2) , 817-821
- https://doi.org/10.1063/1.373742
Abstract
Field dependent drift velocity results are presented for hole transport in bulk gallium antimonide material based on a Monte Carlo model which includes energy band warping. Transient drift velocities are demonstrated to be higher than for gallium arsenide. The steady-state characteristics are also shown to be superior. The material appears to have potential for high-speed photodetection.This publication has 53 references indexed in Scilit:
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