Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe
- 1 May 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (5) , 473-478
- https://doi.org/10.1007/bf02661616
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Photoassisted metalorganic molecular beam epitaxy of ZnSeApplied Physics Letters, 1992
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE SystemJapanese Journal of Applied Physics, 1990
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- Surface studies of the thermal decomposition of triethylgallium on GaAs (100)Journal of Crystal Growth, 1990
- p-type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxyApplied Physics Letters, 1990
- Growth of Lattice-Matched ZnSe-ZnS Superlattices onto GaAs Substrates by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1989
- Comparative Study of ZnSe Growth Rate by Metal Organic Molecular Beam Epitaxy Using Different Zn SourcesJapanese Journal of Applied Physics, 1988
- Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructuresApplied Physics Letters, 1988
- Metalorganic molecular-beam epitaxy of ZnSe and ZnSJournal of Applied Physics, 1987
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe Using Diethylzinc and DiethylselenideJapanese Journal of Applied Physics, 1986