The photoluminescence spectra of excitons bound to group II acceptors in indium phosphide
- 30 November 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 11 (9) , 1099-1103
- https://doi.org/10.1016/0038-1098(72)90801-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972
- The observation of strain effects in the photoluminescence spectrum of excitons bound to neutral acceptors in indium phosphideJournal of Physics C: Solid State Physics, 1972
- Optical Properties of Excitons Bound to Neutral Acceptors in GaPPhysical Review B, 1971
- Acceptor Luminescence in High-Purity-Type GaAsPhysical Review Letters, 1970
- Optical Properties of the Donor Tin in Gallium PhosphidePhysical Review B, 1970
- Spectroscopic Investigation of Group-III Acceptor States in SiliconPhysical Review B, 1967
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960