Reflection electron microscopy of epilayers grown by molecular beam epitaxy
- 1 December 1984
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 50 (6) , 849-856
- https://doi.org/10.1080/01418618408237542
Abstract
Reflection electron microscopy has been used lo obtain surface images of interfaces in epilayers grown by molecular beam epitaxy (MBE). The image contrast arises from differences in structure factors for the surface reflections used in the imaging. The technique is potentially a powerful tool for the study of semiconductor devices grown by MBE, by metal organic chemical vapour deposition, and by liquid-phase epitaxy as it yields cross-sectional images of cleavage planes.Keywords
This publication has 8 references indexed in Scilit:
- Atomic and other structures of cleaved GaAs(110) surfacesSurface Science, 1984
- Reflection electron microscopy (REM) of vicinal surfaces of fcc metalsUltramicroscopy, 1983
- Reflection electron microscopy (REM) of fcc metalsUltramicroscopy, 1983
- Surface imaging of III–V semiconductors by reflection electron microscopy and inner potential measurementsThin Solid Films, 1983
- Reflection electron microscopy of clean and gold deposited (111) silicon surfacesSurface Science, 1980
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- Comparison of experimental andn-beam calculated intensities for glancing incidence high-energy electron diffractionActa Crystallographica Section A, 1972
- n-Beam dynamical diffraction of high-energy electrons at glancing incidence. General theory and computational methodsActa Crystallographica Section A, 1972