Low-temperature phonon-limited electron mobility in modulation-doped heterostructures
- 15 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (8) , 5904-5905
- https://doi.org/10.1103/physrevb.33.5904
Abstract
It is pointed out that the approximate subband wave functions used in almost all recent calculations of the phonon-scattering mobility in GaAs heterolayers can lead to significant quantitative errors. A calculation using accurate wave functions and screening gives a best fit to the measured temperature-dependent part of the mobility at low temperatures for a deformation potential of 12 eV.Keywords
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