Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
- 2 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (5) , 722-724
- https://doi.org/10.1063/1.124255
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistorApplied Physics Letters, 1997
- The role of buffer layer in strontium bismuth tantalate based ferroelectric gate mos structures for non-volatile non destructive read out memory applicationsIntegrated Ferroelectrics, 1997
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi 2Ta 2O 9 as the Ferroelectric MaterialJapanese Journal of Applied Physics, 1996
- Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si SubstratesJapanese Journal of Applied Physics, 1995
- Characteristics of ferroelectric gate mos and mosfetsIntegrated Ferroelectrics, 1994
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 Buffer LayerJapanese Journal of Applied Physics, 1994
- Metal-ferroelectric-semiconductor characteristics of bismuth titanate films on siliconFerroelectrics, 1991
- Integrated ferroelectricsFerroelectrics, 1991
- Ferroelectric field-effect memory device using Bi4Ti3O12 filmJournal of Applied Physics, 1975