Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
- 15 December 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (24) , 3507-3509
- https://doi.org/10.1063/1.120374
Abstract
We have proposed a Pt/SrBi 2 Ta 2 O 9 /CeO 2 /SiO 2 /Si structure for a ferroelectric gate of metalferroelectricinsulatorfield effect transistor. A memory window of the proposed ferroelectric gate increases as electric field applied to the SrBi 2 Ta 2 O 9 layer increases, and the memory window of Pt/SrBi 2 Ta 2 O 9 /CeO 2 /SiO 2 /Si is relatively greater than that of Pt/SrBi 2 Ta 2 O 9 /SiO 2 /Si . As a result, the Pt/SrBi 2 Ta 2 O 9 (140 nm)/CeO 2 (25 nm)/SiO 2 /Si structure has sufficiently programmable memory windows from 0.9 to 2.5 V in the low gate voltage range of 4–7 V.Keywords
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