Effective mass in picosecond laser-produced high-density plasma in silicon
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (1) , 195-196
- https://doi.org/10.1109/jqe.1986.1072853
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealingSolid State Communications, 1981
- Determination of Free Electron Effective Mass of n-Type SiliconJournal of Applied Physics, 1963
- Electron Effective Masses of InAs and GaAs as a Function of Temperature and DopingPhysical Review B, 1961
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957